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Changes of GluRs on postsynaptic membrane and delayed neuron death after OGD
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- Author:
- No author available
- Journal Title:
- CHINESE JOURNAL OF NEUROMEDICINE
- Issue:
- 5
- DOI:
- 10.3760/cma.j.issn.1671-8925.2004.05.001
- Key Word:
- GluRs;AMPA受体;神经元延迟性死亡
Abstract： 目的探讨OGD损伤后神经元突触后膜GluR1～3含量变化及其在神经元延迟性细胞死亡中的作用.方法采用PI染色、细胞比色分析和双重免疫荧光技术定量观察神经元死亡、膜表面及突触GluR1～3含量变化.结果OGD后神经元死亡数量明显增加;膜表面GluR2含量、含GluR2的突触数目以及突触部位GluR2含量都明显降低(P《0.05),膜表面GluR2含量下降以突触部位为主,而膜表面GluR1和GluR3却明显增加.结论OGD损伤可致突触后膜表面GluR2含量降低,GluR1和GluR3增加并可形成缺乏GluR2的AMPA受体通道,从而介导了Ca2+的快速内流,引起神经元的延迟性死亡.
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