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Subthreshold membrane potential oscillation mediates adrenosensitivity in chronically compressed DRG neurons

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Author:
No author available
Journal Title:
JOURNAL OF THE FOURTH MILITARY MEDICAL UNIVERSITY
Issue:
5
DOI:
10.3321/j.issn:1000-2790.2004.05.001
Key Word:
背根节;神经元;去甲肾上腺素;膜电位;神经痛

Abstract: 目的:在背根节(dorsal root ganglion,DRG)慢性压迫这一神经病理性痛模型研究交感敏化的膜机制. 方法:采用离体细胞内记录,在受损DRG神经元观察去甲肾上腺素(norepinephrine,NE)对其膜电位的影响. 结果:NE在受损(40/45)及正常(15/22)DRG 神经元均可以诱发膜电位的去极化过程. NE诱发的膜电位去极化有浓度依赖性且可被酚妥拉明阻断. 仅有部分受损DRG 神经元可在NE诱发的膜电位去极化基础上出现阈下膜电位振荡(subthreshold membrane potential oscillation, SMPO)并随后出现重复放电. 当应用TTX选择性地消除SMPO后,虽然NE诱发的膜电位去极化仍然存在,但神经元的重复放电不再产生. 结论:触发及增大SMPO是NE诱发受损DRG 神经元兴奋效应产生的一个关键因素.

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